onsemi NVTFS010N10MCL N-Channel MOSFET, 57.8 A, 100 V Enhancement, 8-Pin WDFN NVTFS010N10MCLTAG
- RS Stock No.:
- 195-2554
- Mfr. Part No.:
- NVTFS010N10MCLTAG
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 30 units)*
PHP2,772.90
(exc. VAT)
PHP3,105.60
(inc. VAT)
FREE delivery for orders over ₱5,000.00
Supply shortage
- 5,040 left, ready to ship from another location
Our current stock is limited and our suppliers are expecting shortages.
Units | Per Unit | Per Pack* |
|---|---|---|
| 30 - 270 | PHP92.43 | PHP2,772.90 |
| 300 - 720 | PHP89.657 | PHP2,689.71 |
| 750 + | PHP86.968 | PHP2,609.04 |
*price indicative
- RS Stock No.:
- 195-2554
- Mfr. Part No.:
- NVTFS010N10MCLTAG
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 57.8A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | NVTFS010N10MCL | |
| Package Type | WDFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 15.9mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 77.8W | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Width | 3.15mm | |
| Standards/Approvals | No | |
| Height | 0.75mm | |
| Length | 3.3mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 57.8A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series NVTFS010N10MCL | ||
Package Type WDFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 15.9mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 77.8W | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Width 3.15mm | ||
Standards/Approvals No | ||
Height 0.75mm | ||
Length 3.3mm | ||
Automotive Standard AEC-Q101 | ||
Automotive Power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.
Small Footprint (3x3 mm)
Compact Design
Low On-Resistance
Minimizes Conduction Losses
Low Capacitance
Minimize Driver Losses
PPAP Capable
Suitable for Automotive Applications
Application
Reverser Battery protection
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
Switching power supplies
Related links
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