Specifications

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	onsemi
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	28.3A
	Maximum Drain Source Voltage Vds	30V
	Series	NVTFS
	Package Type	WDFN
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	3.1mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	20nC
	Maximum Power Dissipation Pd	107W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.1V
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Width	0.8 mm
	Length	3.15mm
	Height	3.15mm
	Automotive Standard	No

	Select all
	Brand onsemi
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 28.3A
	Maximum Drain Source Voltage Vds 30V
	Series NVTFS
	Package Type WDFN
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 3.1mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 20nC
	Maximum Power Dissipation Pd 107W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.1V
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Width 0.8 mm
	Length 3.15mm
	Height 3.15mm
	Automotive Standard No

Datasheet - NVTFS4C02NTAG

The ON Semiconductor Automotive power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance. The wettable flank option available for enhanced optical inspection. It used AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.

Low RDS(on) to minimize conduction losses

Low capacitance to minimize driver losses

onsemi NVTFS Type N-Channel MOSFET, 28.3 A, 30 V Enhancement, 8-Pin WDFN

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