onsemi FDMS Type N-Channel MOSFET, 116 A, 80 V Enhancement, 8-Pin PQFN FDMS4D5N08LC
- RS Stock No.:
- 195-2499
- Mfr. Part No.:
- FDMS4D5N08LC
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
PHP1,113.28
(exc. VAT)
PHP1,246.87
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from June 01, 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 90 | PHP111.328 | PHP1,113.28 |
| 100 - 490 | PHP101.17 | PHP1,011.70 |
| 500 - 990 | PHP97.842 | PHP978.42 |
| 1000 - 1490 | PHP96.587 | PHP965.87 |
| 1500 + | PHP95.366 | PHP953.66 |
*price indicative
- RS Stock No.:
- 195-2499
- Mfr. Part No.:
- FDMS4D5N08LC
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 116A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | FDMS | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 7.5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 51nC | |
| Maximum Power Dissipation Pd | 113.6W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 5.85mm | |
| Width | 5 mm | |
| Standards/Approvals | No | |
| Height | 1.05mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 116A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series FDMS | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 7.5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 51nC | ||
Maximum Power Dissipation Pd 113.6W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Length 5.85mm | ||
Width 5 mm | ||
Standards/Approvals No | ||
Height 1.05mm | ||
Automotive Standard No | ||
This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with soft body diode.
Shielded Gate MOSFET Technology
Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 37 A
Max rDS(on) = 6.1 mΩ at VGS = 4.5 V, ID = 29 A
50% Lower Qrr than Other MOSFET Suppliers
Lowers Switching Noise/EMI
Logic Level drive Capable
Application
This product is general usage and suitable for many different applications.
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