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onsemi FDMS Type N-Channel MOSFET, 67 A, 120 V Enhancement, 8-Pin PQFN FDMS4D0N12C

RS Stock No.:: 178-4409
Mfr. Part No.:: FDMS4D0N12C
Manufacturer:: onsemi

onsemi FDMS Type N-Channel MOSFET, 67 A, 120 V Enhancement, 8-Pin PQFN FDMS4D0N12C

This image is representative of the product range

Bulk discount available

Subtotal (1 pack of 10 units)*

PHP1,755.60

(exc. VAT)

PHP1,966.30

(inc. VAT)

FREE delivery for orders over ₱3,000.00

Last RS stock

Final 2,950 unit(s), ready to ship from another location

Units	Per Unit	Per Pack*
10 - 90	PHP175.56	PHP1,755.60
100 - 490	PHP170.294	PHP1,702.94
500 - 990	PHP165.185	PHP1,651.85
1000 +	PHP160.231	PHP1,602.31

*price indicative

RS Stock No.:: 178-4409
Mfr. Part No.:: FDMS4D0N12C
Manufacturer:: onsemi

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	67A
	Maximum Drain Source Voltage Vds	120V
	Package Type	PQFN
	Series	FDMS
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	4mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	36nC
	Maximum Power Dissipation Pd	106W
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	5mm
	Width	6 mm
	Height	1.05mm
	Automotive Standard	No

	Select all
	Brand onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 67A
	Maximum Drain Source Voltage Vds 120V
	Package Type PQFN
	Series FDMS
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 4mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 36nC
	Maximum Power Dissipation Pd 106W
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 5mm
	Width 6 mm
	Height 1.05mm
	Automotive Standard No

COO (Country of Origin):: PH

This N-Channel MV MOSFET is produced using advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.

Shielded Gate MOSFET Technology

Max rDS(on) = 4.0 mΩ at VGS = 10 V, ID = 67 A

Max rDS(on) = 8.0 mΩ at VGS = 6 V, ID = 33 A

50% Lower Qrr than Other MOSFET Suppliers

Lowers Switching Noise/EMI

MSL1 Robust Package Design

Applications:

This product is general usage and suitable for many different applications.

End Products:

AC-DC and DC-DC Power Supplies

onsemi FDMS Type N-Channel MOSFET, 67 A, 120 V Enhancement, 8-Pin PQFN FDMS4D0N12C

FREE delivery for orders over ₱3,000.00

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