onsemi NVMFS5H663NL Type N-Channel MOSFET, 67 A, 60 V Enhancement, 5-Pin DFN NVMFS5H663NLT1G
- RS Stock No.:
- 185-9275
- Mfr. Part No.:
- NVMFS5H663NLT1G
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 8 units)*
PHP654.80
(exc. VAT)
PHP733.36
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Last RS stock
- Final 2,952 unit(s), ready to ship from another location
Units | Per Unit | Per Pack* |
|---|---|---|
| 8 - 72 | PHP81.85 | PHP654.80 |
| 80 - 792 | PHP73.665 | PHP589.32 |
| 800 - 3992 | PHP66.298 | PHP530.38 |
| 4000 - 7992 | PHP59.668 | PHP477.34 |
| 8000 + | PHP53.699 | PHP429.59 |
*price indicative
- RS Stock No.:
- 185-9275
- Mfr. Part No.:
- NVMFS5H663NLT1G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 67A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | NVMFS5H663NL | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 10mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Maximum Power Dissipation Pd | 63W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 1.05mm | |
| Length | 5.1mm | |
| Width | 6.1 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 67A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series NVMFS5H663NL | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 10mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Maximum Power Dissipation Pd 63W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 1.05mm | ||
Length 5.1mm | ||
Width 6.1 mm | ||
Automotive Standard AEC-Q101 | ||
Non Compliant
- COO (Country of Origin):
- MY
Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
PPAP Capable
These Devices are Pb−Free
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