onsemi NTMJS1D6N06CL Type N-Channel MOSFET, 250 A, 60 V Enhancement, 8-Pin LFPAK NTMJS1D6N06CLTWG
- RS Stock No.:
- 189-0312
- Mfr. Part No.:
- NTMJS1D6N06CLTWG
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
PHP829.27
(exc. VAT)
PHP928.78
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from June 19, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 5 | PHP165.854 | PHP829.27 |
| 10 - 95 | PHP160.878 | PHP804.39 |
| 100 - 245 | PHP156.052 | PHP780.26 |
| 250 - 995 | PHP151.372 | PHP756.86 |
| 1000 + | PHP146.832 | PHP734.16 |
*price indicative
- RS Stock No.:
- 189-0312
- Mfr. Part No.:
- NTMJS1D6N06CLTWG
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 250A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | NTMJS1D6N06CL | |
| Package Type | LFPAK | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.3mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 167W | |
| Typical Gate Charge Qg @ Vgs | 91nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.2mm | |
| Standards/Approvals | No | |
| Width | 4.9 mm | |
| Length | 5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 250A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series NTMJS1D6N06CL | ||
Package Type LFPAK | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.3mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 167W | ||
Typical Gate Charge Qg @ Vgs 91nC | ||
Maximum Operating Temperature 175°C | ||
Height 1.2mm | ||
Standards/Approvals No | ||
Width 4.9 mm | ||
Length 5mm | ||
Automotive Standard No | ||
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
LFPAK8 Package, Industry Standard
These Devices are Pb-Free
Related links
- onsemi NTMJS1D6N06CL Type N-Channel MOSFET 60 V Enhancement, 8-Pin LFPAK
- onsemi NTMJS1D4N06CL Type N-Channel MOSFET 60 V Enhancement, 8-Pin LFPAK
- onsemi NVMJS2D5N06CL Type N-Channel MOSFET 60 V Enhancement, 8-Pin LFPAK
- onsemi NTMJS0D9N04CL Type N-Channel MOSFET 40 V Enhancement, 8-Pin LFPAK
- onsemi NVMJS1D3N04C Type N-Channel MOSFET 40 V Enhancement, 8-Pin LFPAK
- onsemi NTMYS1D2N04CL Type N-Channel MOSFET 40 V Enhancement, 8-Pin LFPAK
- onsemi NTMJS1D5N04CL Type N-Channel MOSFET 40 V Enhancement, 8-Pin LFPAK
- onsemi NVMJS1D5N04CL Type N-Channel MOSFET 40 V Enhancement, 8-Pin LFPAK