STMicroelectronics Type N-Channel MOSFET, 7 A, 650 V Enhancement, 3-Pin TO-252 STD11N65M2
- RS Stock No.:
- 188-8395
- Mfr. Part No.:
- STD11N65M2
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
PHP566.44
(exc. VAT)
PHP634.415
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- Plus 2,435 unit(s) shipping from December 29, 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 45 | PHP113.288 | PHP566.44 |
| 50 - 95 | PHP109.884 | PHP549.42 |
| 100 - 245 | PHP106.586 | PHP532.93 |
| 250 - 995 | PHP103.388 | PHP516.94 |
| 1000 + | PHP100.288 | PHP501.44 |
*price indicative
- RS Stock No.:
- 188-8395
- Mfr. Part No.:
- STD11N65M2
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 7A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 680mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 85W | |
| Typical Gate Charge Qg @ Vgs | 100nC | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Forward Voltage Vf | 1.6V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.17mm | |
| Length | 6.6mm | |
| Width | 6.2 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 7A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 680mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 85W | ||
Typical Gate Charge Qg @ Vgs 100nC | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Forward Voltage Vf 1.6V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 2.17mm | ||
Length 6.6mm | ||
Width 6.2 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters.
Extremely low gate charge
Excellent output capacitance (COSS) profile
Zener-protected
Applications
Switching applications
Related links
- STMicroelectronics Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252
- STMicroelectronics Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263
- STMicroelectronics Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263 STB43N65M5
- ROHM Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252 R6507END3TL1
- ROHM Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252 R6507KND3TL1
- Infineon CoolMOS C7 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS C7 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 IPA65R225C7XKSA1
- Infineon OptiMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO252-3 IPD60R600CM8XTMA1