STMicroelectronics Type N-Channel MOSFET, 7 A, 650 V Enhancement, 3-Pin TO-263 STB43N65M5
- RS Stock No.:
- 188-8512
- Mfr. Part No.:
- STB43N65M5
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 2 units)*
PHP987.54
(exc. VAT)
PHP1,106.04
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 770 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 48 | PHP493.77 | PHP987.54 |
| 50 - 98 | PHP483.90 | PHP967.80 |
| 100 - 248 | PHP474.22 | PHP948.44 |
| 250 - 498 | PHP464.735 | PHP929.47 |
| 500 + | PHP455.44 | PHP910.88 |
*price indicative
- RS Stock No.:
- 188-8512
- Mfr. Part No.:
- STB43N65M5
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 7A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 630mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.6V | |
| Maximum Power Dissipation Pd | 70W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 9.35 mm | |
| Length | 10.4mm | |
| Height | 4.37mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 7A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 630mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.6V | ||
Maximum Power Dissipation Pd 70W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 9.35 mm | ||
Length 10.4mm | ||
Height 4.37mm | ||
Automotive Standard AEC-Q101 | ||
This device is an N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency.
Extremely low RDS(on)
Low gate charge and input capacitance
Excellent switching performance
Applications
Switching applications
Related links
- STMicroelectronics Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263
- STMicroelectronics Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252
- STMicroelectronics Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252 STD11N65M2
- ROHM Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252 R6507END3TL1
- ROHM Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252 R6507KND3TL1
- Infineon CoolMOS C7 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS C7 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 IPA65R225C7XKSA1
- Infineon OptiMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO252-3 IPD60R600CM8XTMA1