Vishay SiSS26LDN Type N-Channel MOSFET, 81.2 A, 60 V Enhancement, 8-Pin PowerPAK 1212 SISS26LDN-T1-GE3

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Subtotal (1 pack of 10 units)*

PHP556.64

(exc. VAT)

PHP623.44

(inc. VAT)

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Units
Per Unit
Per Pack*
10 - 40PHP55.664PHP556.64
50 - 90PHP54.903PHP549.03
100 - 490PHP46.549PHP465.49
500 - 990PHP41.967PHP419.67
1000 +PHP35.783PHP357.83

*price indicative

Packaging Options:
RS Stock No.:
188-5033
Mfr. Part No.:
SISS26LDN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

81.2A

Maximum Drain Source Voltage Vds

60V

Series

SiSS26LDN

Package Type

PowerPAK 1212

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

6.2mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

57W

Forward Voltage Vf

1.1V

Typical Gate Charge Qg @ Vgs

31.5nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

0.78mm

Length

3.3mm

Standards/Approvals

No

Width

3.3 mm

Automotive Standard

No

N-Channel 60 V (D-S) MOSFET.

TrenchFET® Gen IV power MOSFET

Very low RDS x Qg figure-of-merit (FOM)

Tuned for the lowest RDS x Qoss FOM

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