Vishay SiHG22N60EF Type N-Channel MOSFET, 19 A, 600 V Enhancement, 3-Pin TO-247 SIHG22N60EF-GE3

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Subtotal (1 pack of 2 units)*

PHP577.81

(exc. VAT)

PHP647.148

(inc. VAT)

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Units
Per Unit
Per Pack*
2 - 8PHP288.905PHP577.81
10 +PHP254.365PHP508.73

*price indicative

Packaging Options:
RS Stock No.:
188-4992
Mfr. Part No.:
SIHG22N60EF-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

19A

Maximum Drain Source Voltage Vds

600V

Series

SiHG22N60EF

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

182mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

48nC

Maximum Power Dissipation Pd

179W

Maximum Gate Source Voltage Vgs

30 V

Maximum Operating Temperature

150°C

Width

5.31 mm

Standards/Approvals

No

Length

15.87mm

Height

20.82mm

Automotive Standard

No

Distrelec Product Id

304-38-849

EF Series Power MOSFET With Fast Body Diode.

Low figure-of-merit (FOM) Ron x Qg

Low input capacitance (Ciss)

Reduced switching and conduction losses

APPLICATIONS

Server and telecom power supplies

Switch mode power supplies (SMPS)

Power factor correction power supplies (PFC)

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