onsemi NVMTS0D4N04CL N-Channel MOSFET, 553.8 A, 40 V Enhancement, 8-Pin DFN NVMTS0D4N04CLTXG
- RS Stock No.:
- 186-1334
- Mfr. Part No.:
- NVMTS0D4N04CLTXG
- Manufacturer:
- onsemi
This image is representative of the product range
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View bulk pricing optionsSubtotal (1 pack of 2 units)*
PHP1,472.40
(exc. VAT)
PHP1,649.08
(inc. VAT)
FREE delivery for orders over ₱5,000.00
In Stock
- Plus 2,432 unit(s) shipping from September 14, 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 18 | PHP736.20 | PHP1,472.40 |
| 20 - 198 | PHP714.13 | PHP1,428.26 |
| 200 - 498 | PHP692.715 | PHP1,385.43 |
| 500 - 998 | PHP671.935 | PHP1,343.87 |
| 1000 + | PHP651.77 | PHP1,303.54 |
*price indicative
- RS Stock No.:
- 186-1334
- Mfr. Part No.:
- NVMTS0D4N04CLTXG
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 553.8A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | DFN | |
| Series | NVMTS0D4N04CL | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 640μΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 163nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 244W | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.15mm | |
| Width | 8mm | |
| Standards/Approvals | No | |
| Length | 8.1mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 553.8A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type DFN | ||
Series NVMTS0D4N04CL | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 640μΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 163nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 244W | ||
Maximum Operating Temperature 175°C | ||
Height 1.15mm | ||
Width 8mm | ||
Standards/Approvals No | ||
Length 8.1mm | ||
Automotive Standard AEC-Q101 | ||
Non Compliant
Automotive Power MOSFET in a 8x8mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.
Small Footprint (8x8 mm)
Low RDS(on)
Low QG and Capacitance
Wettable Flank Option
PPAP Capable
Compact Design
Minimize Conduction Losses
Minimize Driver Losses
Enhanced Optical Inspection
Applications
Reverser Battery protection
Switching power supplies
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
End Products
Motor Control – EPS, Wipers, Fans, Seats, etc.
Load Switch – ECU, Chassis, Body
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