DiodesZetex DMP Type P-Channel MOSFET, 150 A, 20 V Enhancement, 8-Pin PowerDI5060 DMP2003UPS-13
- RS Stock No.:
- 182-7343
- Mfr. Part No.:
- DMP2003UPS-13
- Manufacturer:
- DiodesZetex
This image is representative of the product range
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Subtotal (1 pack of 10 units)*
PHP551.00
(exc. VAT)
PHP617.10
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 6,740 unit(s) ready to ship from another location
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Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 90 | PHP55.10 | PHP551.00 |
| 100 - 240 | PHP53.447 | PHP534.47 |
| 250 - 490 | PHP50.239 | PHP502.39 |
| 500 - 990 | PHP45.718 | PHP457.18 |
| 1000 + | PHP40.231 | PHP402.31 |
*price indicative
- RS Stock No.:
- 182-7343
- Mfr. Part No.:
- DMP2003UPS-13
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 150A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | PowerDI5060 | |
| Series | DMP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Maximum Power Dissipation Pd | 80W | |
| Forward Voltage Vf | -1.1V | |
| Typical Gate Charge Qg @ Vgs | 177nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.1 mm | |
| Length | 6mm | |
| Standards/Approvals | No | |
| Height | 1.05mm | |
| Automotive Standard | AEC-Q100, AEC-Q101, AEC-Q200 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 150A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type PowerDI5060 | ||
Series DMP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Maximum Power Dissipation Pd 80W | ||
Forward Voltage Vf -1.1V | ||
Typical Gate Charge Qg @ Vgs 177nC | ||
Maximum Operating Temperature 150°C | ||
Width 5.1 mm | ||
Length 6mm | ||
Standards/Approvals No | ||
Height 1.05mm | ||
Automotive Standard AEC-Q100, AEC-Q101, AEC-Q200 | ||
- COO (Country of Origin):
- CN
This new generation MOSFET is designed to minimize RDS(ON) and yet maintain superior switching performance. This device is ideal for use in notebook battery power management and load switch.
Thermally Efficient Package-Cooler Running Applications
High Conversion Efficiency
Low RDS(ON) – Minimizes On State Losses
<1.1mm Package Profile – Ideal for Thin Applications
Lead-free finish
Halogen and Antimony Free. “Green” Device
Application
Switch
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