Vishay TrenchFET Type P-Channel MOSFET, 19.7 A, 30 V Enhancement, 8-Pin SO-8 SI4425DDY-T1-GE3

RS Stock No.:: 180-8062
Mfr. Part No.:: SI4425DDY-T1-GE3
Manufacturer:: Vishay

Vishay TrenchFET Type P-Channel MOSFET, 19.7 A, 30 V Enhancement, 8-Pin SO-8 SI4425DDY-T1-GE3

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Subtotal (1 pack of 20 units)*

PHP758.52

(exc. VAT)

PHP849.54

(inc. VAT)

FREE delivery for orders over ₱3,000.00

Last RS stock

Final 2,780 unit(s), ready to ship from another location

Units	Per Unit	Per Pack*
20 - 20	PHP37.926	PHP758.52
40 - 80	PHP36.788	PHP735.76
100 - 480	PHP34.581	PHP691.62
500 - 980	PHP31.468	PHP629.36
1000 +	PHP27.692	PHP553.84

*price indicative

RS Stock No.:: 180-8062
Mfr. Part No.:: SI4425DDY-T1-GE3
Manufacturer:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	19.7A
	Maximum Drain Source Voltage Vds	30V
	Series	TrenchFET
	Package Type	SO-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	16.5mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	3.6W
	Typical Gate Charge Qg @ Vgs	27nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	-1.2V
	Maximum Operating Temperature	150°C
	Length	5mm
	Standards/Approvals	No
	Width	6.2 mm
	Height	1.75mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 19.7A
	Maximum Drain Source Voltage Vds 30V
	Series TrenchFET
	Package Type SO-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 16.5mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 3.6W
	Typical Gate Charge Qg @ Vgs 27nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf -1.2V
	Maximum Operating Temperature 150°C
	Length 5mm
	Standards/Approvals No
	Width 6.2 mm
	Height 1.75mm
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 30V and a maximum gate-source voltage of 20V. It has drain-source resistance of 9.8mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 5.7W and continuous drain current of 19.7A. The minimum and a maximum driving voltage for this MOSFET is 4.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications

• Desktop PCs

• Load switches

• Notebook PCs

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC 61249-2-21

• Rg tested