Vishay Dual SI7216DN N-Channel MOSFET, 6.5 A, 40 V Enhancement, 8-Pin PowerPack SI7216DN-T1-E3
- RS Stock No.:
- 180-7922
- Mfr. Part No.:
- SI7216DN-T1-E3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
PHP719.45
(exc. VAT)
PHP805.80
(inc. VAT)
FREE delivery for orders over ₱5,000.00
In Stock
- Plus 2,915 unit(s) shipping from September 21, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 45 | PHP143.89 | PHP719.45 |
| 50 - 95 | PHP129.504 | PHP647.52 |
| 100 - 495 | PHP116.558 | PHP582.79 |
| 500 - 995 | PHP104.902 | PHP524.51 |
| 1000 + | PHP94.41 | PHP472.05 |
*price indicative
- RS Stock No.:
- 180-7922
- Mfr. Part No.:
- SI7216DN-T1-E3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 6.5A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | SI7216DN | |
| Package Type | PowerPack | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 25mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 12.5nC | |
| Minimum Operating Temperature | -50°C | |
| Maximum Power Dissipation Pd | 20.8W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Length | 3.4mm | |
| Height | 1.12mm | |
| Width | 3.4mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 6.5A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series SI7216DN | ||
Package Type PowerPack | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 25mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 12.5nC | ||
Minimum Operating Temperature -50°C | ||
Maximum Power Dissipation Pd 20.8W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Length 3.4mm | ||
Height 1.12mm | ||
Width 3.4mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay SI7216DN is a dual N-channel MOSFET having drain to source(Vds) voltage of 40V.The gate to source voltage(VGS) is 20V. It is having power PAK 1212-8 package. It offers drain to source resistance (RDS.) 0.032ohms at 10VGS and 0.039ohms at 4.5VGS. Maximum drain current 6A.
Trench FET power MOSFET
Low thermal resistance Power PAK package with small size and low 1.07 mm profile
100 % Rg and UIS tested
Compliant to RoHS directive 2002/95/EC
Related links
- Vishay Dual SI7216DN N-Channel MOSFET 40 V Enhancement, 8-Pin PowerPack SI7216DN-T1-E3
- Vishay Dual SI7956DP N-Channel MOSFET 150 V Enhancement, 8-Pin PowerPack SI7956DP-T1-GE3
- Vishay Dual SI7997DP N-Channel MOSFET -30 V Enhancement, 8-Pin PowerPack SI7997DP-T1-GE3
- Vishay Dual TrenchFET 2 Type P 5.3 A 8-Pin SO-8 SI4559ADY-T1-E3
- Vishay Dual SIA931DJ Type P-Channel MOSFET -30 V Enhancement, 6-Pin PowerPack SIA931DJ-T1-GE3
- Vishay Dual N Channel Mosfet TrenchFET 2 N-Channel MOSFET 100 V Enhancement, 8-Pin PowerPAK 1212
- Vishay Dual TrenchFET 2 Type P 4 A 8-Pin PowerPAK 1212-8 Dual
- Vishay Dual SiSF06DN 2 N-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK 1212 SISF06DN-T1-GE3