Vishay Single E Type N-Channel MOSFET, 47 A, 650 V TO-247AC SIHG47N65E-GE3

RS Stock No.:: 180-7734
Mfr. Part No.:: SIHG47N65E-GE3
Manufacturer:: Vishay

Vishay Single E Type N-Channel MOSFET, 47 A, 650 V TO-247AC SIHG47N65E-GE3

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PHP392.78

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PHP439.91

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Units	Per Unit
1 - 4	PHP392.78
5 - 9	PHP381.00
10 +	PHP369.57

*price indicative

RS Stock No.:: 180-7734
Mfr. Part No.:: SIHG47N65E-GE3
Manufacturer:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	47A
	Maximum Drain Source Voltage Vds	650V
	Series	E
	Package Type	TO-247AC
	Maximum Drain Source Resistance Rds	0.072Ω
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	417W
	Maximum Gate Source Voltage Vgs	±30 V
	Typical Gate Charge Qg @ Vgs	273nC
	Transistor Configuration	Single
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Select all
	Brand Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 47A
	Maximum Drain Source Voltage Vds 650V
	Series E
	Package Type TO-247AC
	Maximum Drain Source Resistance Rds 0.072Ω
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 417W
	Maximum Gate Source Voltage Vgs ±30 V
	Typical Gate Charge Qg @ Vgs 273nC
	Transistor Configuration Single
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay surface mount N-channel TO-247AC-3 MOSFET is a new age product with a drain-source voltage of 650V and a maximum gate-source voltage of 30V. It has a drain-source resistance of 72mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 417W and continuous drain current of 47A. It has a driving voltage of 10V. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Low figure-of-merit (FOM) Ron x Qg

• Low input capacitance (Ciss)

• Operating temperature ranges between -55°C and 150°C

• Reduced switching and conduction losses

• Ultra low gate charge (Qg)

Applications

• Battery chargers

• Fluorescent ballast lighting

• High-intensity discharge (HID)

• Motor drives

• Power factor correction power supplies (PFC)

• Renewable energy

• Server and telecom power supplies

• Solar PV inverters

• Switch mode power supplies (SMPS)

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• UIS tested