Vishay Single E Type N-Channel MOSFET, 47 A, 650 V TO-247AC

RS Stock No.:: 180-7345
Mfr. Part No.:: SIHG47N65E-GE3
Manufacturer:: Vishay

Vishay Single E Type N-Channel MOSFET, 47 A, 650 V TO-247AC

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Bulk discount available

Subtotal (1 tube of 25 units)*

PHP10,239.45

(exc. VAT)

PHP11,468.175

(inc. VAT)

FREE delivery for orders over ₱3,000.00

Last RS stock

Final 25 unit(s), ready to ship from another location

Units	Per Unit	Per Tube*
25 - 75	PHP409.578	PHP10,239.45
100 - 225	PHP397.29	PHP9,932.25
250 - 475	PHP385.372	PHP9,634.30
500 - 975	PHP373.811	PHP9,345.28
1000 +	PHP362.596	PHP9,064.90

*price indicative

RS Stock No.:: 180-7345
Mfr. Part No.:: SIHG47N65E-GE3
Manufacturer:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	47A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-247AC
	Series	E
	Maximum Drain Source Resistance Rds	0.072Ω
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	±30 V
	Maximum Power Dissipation Pd	417W
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	273nC
	Transistor Configuration	Single
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Select all
	Brand Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 47A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-247AC
	Series E
	Maximum Drain Source Resistance Rds 0.072Ω
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs ±30 V
	Maximum Power Dissipation Pd 417W
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 273nC
	Transistor Configuration Single
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay surface mount N-channel TO-247AC-3 MOSFET is a new age product with a drain-source voltage of 650V and a maximum gate-source voltage of 30V. It has a drain-source resistance of 72mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 417W and continuous drain current of 47A. It has a driving voltage of 10V. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Low figure-of-merit (FOM) Ron x Qg

• Low input capacitance (Ciss)

• Operating temperature ranges between -55°C and 150°C

• Reduced switching and conduction losses

• Ultra low gate charge (Qg)

Applications

• Battery chargers

• Fluorescent ballast lighting

• High-intensity discharge (HID)

• Motor drives

• Power factor correction power supplies (PFC)

• Renewable energy

• Server and telecom power supplies

• Solar PV inverters

• Switch mode power supplies (SMPS)

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• UIS tested