Infineon OptiMOS Type N-Channel MOSFET, 540 mA, 55 V Enhancement, 3-Pin SOT-23 BSS670S2LH6327XTSA1

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PHP14,931.00

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PHP16,722.00

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RS Stock No.:
178-7474
Mfr. Part No.:
BSS670S2LH6327XTSA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

540mA

Maximum Drain Source Voltage Vds

55V

Package Type

SOT-23

Series

OptiMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

825mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.8V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

1.7nC

Maximum Power Dissipation Pd

360mW

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

2.9mm

Height

1mm

Automotive Standard

AEC-Q101

Infineon OptiMOS Series MOSFET, 55V Drain Source Voltage, 540mA Continuous Drain Current - BSS670S2LH6327XTSA1


This MOSFET is a small-signal N-channel transistor designed for surface-mounted switching in compact electronic systems. It is intended for applications that require controlled enhancement-mode switching with moderate voltage and current ratings, and is qualified for automotive environments.

Features and Benefits:


• 55V drain tolerance enables higher-voltage switching circuits
• 825mΩ low RDS(on) minimises conduction losses in low-current paths
• 540mA continuous drain current supports steady-state loads
• 1.7nC typical gate charge allows efficient high-speed switching
• 360mW power dissipation suits modest thermal budgets
• -55°C to 150°C operating range accommodates wide-temperature environments

Applications


• Suitable for automotive sensor-interface switching
• Ideal for DC load switching in compact modules
• Used with battery-management auxiliary circuits
• Can be used for gate drivers in low-power converters
• Used for signal-level switching on mixed-signal boards

What mounting considerations apply to small packages?


The device is supplied in a three-pin SOT-23 package intended for surface mounting, so land-pattern thermal relief and solder fillets should be planned to manage its 360mW dissipation.

How does gate drive affect switching performance?


Driving the gate up to 20V increases conduction margin, while the 1.7nC gate charge determines required driver current for desired rise/fall times.

What is the device’s behaviour under continuous load?


It can carry up to 540mA continuously, provided thermal constraints are respected and ambient conditions allow sufficient heat transfer.

Is this component suitable for automotive qualification needs?


It meets AEC‑Q101 requirements, making it appropriate for automotive electronic applications that require that standard.

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