Infineon OptiMOS Type N-Channel MOSFET, 540 mA, 55 V Enhancement, 3-Pin SOT-23 BSS670S2LH6327XTSA1

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PHP12,054.00

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PHP13,500.00

(inc. VAT)

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RS Stock No.:
178-7474
Mfr. Part No.:
BSS670S2LH6327XTSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

540mA

Maximum Drain Source Voltage Vds

55V

Series

OptiMOS

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

825mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

360mW

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

1.7nC

Forward Voltage Vf

0.8V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

2.9mm

Height

1mm

Width

1.3 mm

Automotive Standard

AEC-Q101

Infineon OptiMOS™ Power MOSFET Family


OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

N-channel - Enhancement mode

Automotive AEC Q101 qualified

MSL1 up to 260°C peak reflow

175°C operating temperature

Green package (lead free)

Ultra low Rds(on)

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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