DiodesZetex Isolated 2 Type N-Channel MOSFET, 540 mA, 20 V Enhancement, 6-Pin SOT-26
- RS Stock No.:
- 122-3248
- Mfr. Part No.:
- DMN2004DMK-7
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 3000 units)*
PHP28,470.00
(exc. VAT)
PHP31,890.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from May 22, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | PHP9.49 | PHP28,470.00 |
| 6000 - 9000 | PHP9.253 | PHP27,759.00 |
| 12000 + | PHP9.021 | PHP27,063.00 |
*price indicative
- RS Stock No.:
- 122-3248
- Mfr. Part No.:
- DMN2004DMK-7
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 540mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-26 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 900mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.4V | |
| Minimum Operating Temperature | 150°C | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Power Dissipation Pd | 225mW | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | -65°C | |
| Length | 3.1mm | |
| Standards/Approvals | MIL-STD-202, AEC-Q101, J-STD-020, UL 94V-0, RoHS | |
| Height | 1.3mm | |
| Width | 1.7 mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 540mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-26 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 900mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.4V | ||
Minimum Operating Temperature 150°C | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Power Dissipation Pd 225mW | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature -65°C | ||
Length 3.1mm | ||
Standards/Approvals MIL-STD-202, AEC-Q101, J-STD-020, UL 94V-0, RoHS | ||
Height 1.3mm | ||
Width 1.7 mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
Dual N-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
Related links
- DiodesZetex Isolated 2 Type N-Channel MOSFET 20 V Enhancement, 6-Pin SOT-26 DMN2004DMK-7
- DiodesZetex Isolated 2 Type P 540 mA 6-Pin SC-88
- DiodesZetex Isolated 2 Type P 540 mA 6-Pin SC-88 DMC2004DWK-7
- DiodesZetex Isolated 2 Type N-Channel Power MOSFET 60 V Enhancement, 6-Pin SOT-26
- DiodesZetex Isolated 2 Type P-Channel Small Signal 20 V Enhancement, 6-Pin SOT-26
- DiodesZetex Isolated 2 Type P 520 mA 6-Pin SOT-963
- DiodesZetex Isolated 2 Type N 700 mA 6-Pin SOT-563
- DiodesZetex Isolated 2 Type N-Channel Power MOSFET 60 V Enhancement, 6-Pin SOT-26 DMN601DMK-7