Nexperia BSH111BK Type N-Channel MOSFET, 335 mA, 55 V Enhancement, 3-Pin SOT-23
- RS Stock No.:
- 170-4850
- Mfr. Part No.:
- BSH111BKR
- Manufacturer:
- Nexperia
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 3000 units)*
PHP9,114.00
(exc. VAT)
PHP10,209.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- 3,000 unit(s) shipping from May 20, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | PHP3.038 | PHP9,114.00 |
| 6000 - 12000 | PHP2.904 | PHP8,712.00 |
| 15000 - 27000 | PHP2.821 | PHP8,463.00 |
| 30000 - 72000 | PHP2.705 | PHP8,115.00 |
| 75000 + | PHP2.633 | PHP7,899.00 |
*price indicative
- RS Stock No.:
- 170-4850
- Mfr. Part No.:
- BSH111BKR
- Manufacturer:
- Nexperia
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 335mA | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | BSH111BK | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8.1Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 0.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 10 V | |
| Maximum Power Dissipation Pd | 1.45W | |
| Maximum Operating Temperature | 150°C | |
| Length | 3mm | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Width | 1.4 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 335mA | ||
Maximum Drain Source Voltage Vds 55V | ||
Series BSH111BK | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8.1Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 0.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 10 V | ||
Maximum Power Dissipation Pd 1.45W | ||
Maximum Operating Temperature 150°C | ||
Length 3mm | ||
Standards/Approvals No | ||
Height 1mm | ||
Width 1.4 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Logic- and Standard Level MOSFETs in a variety of packages. Sample our robust and easy-to-use MOSFETs in the 40 V to 60 V range. They are perfect for space- and power-critical applications, delivering excellent switching performance and class-leading safe operating area (SOA).
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
Low threshold voltage
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Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 3 kV HBM
Relay driver
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Low-side loadswitch
Switching circuits
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