Nexperia BUK98150 Type N-Channel MOSFET, 5.5 A, 55 V Enhancement, 4-Pin SOT-223
- RS Stock No.:
- 219-4327
- Mfr. Part No.:
- BUK98150-55A/CUF
- Manufacturer:
- Nexperia
This image is representative of the product range
Subtotal (1 reel of 4000 units)*
PHP58,764.00
(exc. VAT)
PHP65,816.00
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per Unit | Per Reel* |
|---|---|---|
| 4000 + | PHP14.691 | PHP58,764.00 |
*price indicative
- RS Stock No.:
- 219-4327
- Mfr. Part No.:
- BUK98150-55A/CUF
- Manufacturer:
- Nexperia
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5.5A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | SOT-223 | |
| Series | BUK98150 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 161mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 5.3nC | |
| Maximum Power Dissipation Pd | 8W | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.3mm | |
| Length | 6.7mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5.5A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type SOT-223 | ||
Series BUK98150 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 161mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 5.3nC | ||
Maximum Power Dissipation Pd 8W | ||
Maximum Operating Temperature 150°C | ||
Height 0.3mm | ||
Length 6.7mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Nexperia BUK98150-55A/CUF Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Low conduction losses due to low on-state resistance
Q101 compliant
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