Vishay Siliconix SQJ872EP Type N-Channel MOSFET, 24.5 A, 150 V Enhancement, 8-Pin SO-8L SQJ872EP-T1_GE3
- RS Stock No.:
- 178-3903
- Mfr. Part No.:
- SQJ872EP-T1_GE3
- Manufacturer:
- Vishay Siliconix
This image is representative of the product range
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View bulk pricing optionsSubtotal (1 pack of 10 units)*
PHP808.00
(exc. VAT)
PHP905.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Supply shortage
- Plus 2,920 left, shipping from August 10, 2026
Our current stock is limited and our suppliers are expecting shortages.
Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 90 | PHP80.80 | PHP808.00 |
| 100 - 490 | PHP78.376 | PHP783.76 |
| 500 - 990 | PHP73.673 | PHP736.73 |
| 1000 + | PHP67.042 | PHP670.42 |
*price indicative
- RS Stock No.:
- 178-3903
- Mfr. Part No.:
- SQJ872EP-T1_GE3
- Manufacturer:
- Vishay Siliconix
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay Siliconix | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 24.5A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | SO-8L | |
| Series | SQJ872EP | |
| Mount Type | PCB | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0395Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 55W | |
| Maximum Operating Temperature | 175°C | |
| Length | 5.99mm | |
| Height | 1.07mm | |
| Width | 5mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay Siliconix | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 24.5A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type SO-8L | ||
Series SQJ872EP | ||
Mount Type PCB | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0395Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 55W | ||
Maximum Operating Temperature 175°C | ||
Length 5.99mm | ||
Height 1.07mm | ||
Width 5mm | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
RoHS Status: Exempt
- COO (Country of Origin):
- CN
Vishay SQJ872EP Series MOSFET, 150V Drain Source Voltage, 24.5A Continuous Drain Current - SQJ872EP-T1_GE3
This MOSFET is a power switching device designed for high-voltage, high-current applications in demanding environments. It functions as an N‑channel enhancement transistor for switching and power conversion roles. The device is suitable for PCB mounting in a small-outline package and is manufactured to meet industry environmental standards.
Features and Benefits:
• Low on-resistance 0.0395Ω delivering reduced conduction losses
• High voltage capability 150V enabling robust switching headroom
• Continuous current rating 24.5A supporting substantial load currents
• Gate charge 14nC enabling efficient switching control
• Power dissipation 55W allowing sustained thermal load handling
• Wide gate tolerance ±20V making gate drive design flexible
• High voltage capability 150V enabling robust switching headroom
• Continuous current rating 24.5A supporting substantial load currents
• Gate charge 14nC enabling efficient switching control
• Power dissipation 55W allowing sustained thermal load handling
• Wide gate tolerance ±20V making gate drive design flexible
Applications
• Suitable for automotive power stages requiring AEC‑Q101 compliance
• Ideal for industrial motor drive switch arrays
• Used with DC-DC converters in high-voltage systems
• Can be used for synchronous rectification in power supplies
• Useful in inverter and UPS front-end switching stages
• Ideal for industrial motor drive switch arrays
• Used with DC-DC converters in high-voltage systems
• Can be used for synchronous rectification in power supplies
• Useful in inverter and UPS front-end switching stages
What temperature range can it tolerate in harsh installations?
It operates across an extended span from -55°C up to 175°C, supporting extreme industrial and automotive thermal conditions.
What package and mounting approach does it use for board assembly?
The device is supplied in an SO‑8L package designed for PCB mounting to simplify integration into compact assemblies.
How does its forward voltage impact system design?
The forward conduction drop is 1.2V under specified conditions, which should be included in power-loss calculations and thermal‑management assessments.
Is the device suitable for regulated manufacturing and environmental requirements?
It meets RoHS directives, indicating restriction of specified hazardous substances in the component materials.
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