Vishay TrenchFET Dual N-Channel MOSFET, 23.5 A, 60 V Enhancement, 8-Pin SO-8L SQJ968EP-T1_BE3

N
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Subtotal (1 tape of 1 unit)*

PHP90.47

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PHP101.33

(inc. VAT)

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Tape(s)
Per Tape
1 - 9PHP90.47
10 - 24PHP59.15
25 - 99PHP31.32
100 - 499PHP30.45
500 +PHP29.58

*price indicative

RS Stock No.:
736-655
Mfr. Part No.:
SQJ968EP-T1_BE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Dual N

Maximum Continuous Drain Current Id

23.5A

Maximum Drain Source Voltage Vds

60V

Series

TrenchFET

Package Type

SO-8L

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.134Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

18.5nC

Maximum Power Dissipation Pd

42W

Maximum Gate Source Voltage Vgs

20V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.1V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Length

5.13mm

Width

6.15mm

Height

1.07mm

Automotive Standard

AEC-Q101

COO (Country of Origin):
DE

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