Vishay Siliconix TrenchFET Type N-Channel MOSFET, 60 A, 60 V Enhancement, 8-Pin SO-8
- RS Stock No.:
- 178-3687
- Mfr. Part No.:
- SiR188DP-T1-RE3
- Manufacturer:
- Vishay Siliconix
This image is representative of the product range
Subtotal (1 reel of 3000 units)*
PHP128,034.00
(exc. VAT)
PHP143,397.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from July 06, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 3000 + | PHP42.678 | PHP128,034.00 |
*price indicative
- RS Stock No.:
- 178-3687
- Mfr. Part No.:
- SiR188DP-T1-RE3
- Manufacturer:
- Vishay Siliconix
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay Siliconix | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SO-8 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 65.7W | |
| Typical Gate Charge Qg @ Vgs | 29nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.07mm | |
| Width | 5 mm | |
| Length | 5.99mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay Siliconix | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SO-8 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 65.7W | ||
Typical Gate Charge Qg @ Vgs 29nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.07mm | ||
Width 5 mm | ||
Length 5.99mm | ||
Automotive Standard No | ||
RoHS Status: Exempt
- COO (Country of Origin):
- CN
TrenchFET® Gen IV power MOSFET
Very low RDS - Qg figure-of-merit (FOM)
Tuned for the lowest RDS - Qoss FOM
Related links
- Vishay Siliconix TrenchFET Type N-Channel MOSFET 60 V Enhancement, 8-Pin SO-8
- Vishay Siliconix TrenchFET Type N-Channel MOSFET 60 V Enhancement, 8-Pin SO-8 SiR188DP-T1-RE3
- Vishay Siliconix TrenchFET Type N-Channel MOSFET 250 V Enhancement, 8-Pin SO-8
- Vishay Siliconix TrenchFET Type N-Channel MOSFET 250 V Enhancement, 8-Pin SO-8 Si7190ADP-T1-RE3
- Vishay Siliconix TrenchFET Type N-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK 1212
- Vishay Siliconix TrenchFET Type N-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK 1212 SiSS12DN-T1-GE3
- Vishay Siliconix TrenchFET Type N-Channel MOSFET 60 V Enhancement, 6-Pin SC-70-6L
- Vishay Siliconix TrenchFET Type N-Channel MOSFET 60 V Enhancement, 6-Pin SC-70-6L SiA106DJ-T1-GE3