Vishay IRFPG50 Type N-Channel Power MOSFET, 6.1 A, 1 kV Enhancement, 3-Pin TO-247AC IRFPG50PBF

RS Stock No.:: 178-0788
Mfr. Part No.:: IRFPG50PBF
Manufacturer:: Vishay

Vishay IRFPG50 Type N-Channel Power MOSFET, 6.1 A, 1 kV Enhancement, 3-Pin TO-247AC IRFPG50PBF

This image is representative of the product range

Subtotal (1 tube of 25 units)*

PHP6,500.50

(exc. VAT)

PHP7,280.50

(inc. VAT)

FREE delivery for orders over ₱3,000.00

In Stock

Plus 500 unit(s) shipping from August 10, 2026

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Units	Per Unit	Per Tube*
25 +	PHP260.02	PHP6,500.50

*price indicative

RS Stock No.:: 178-0788
Mfr. Part No.:: IRFPG50PBF
Manufacturer:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	6.1A
	Maximum Drain Source Voltage Vds	1kV
	Package Type	TO-247AC
	Series	IRFPG50
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	2Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	190nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20V
	Maximum Power Dissipation Pd	190W
	Forward Voltage Vf	1.8V
	Maximum Operating Temperature	150°C
	Height	20.7mm
	Length	15.87mm
	Standards/Approvals	RoHS
	Width	5.31mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 6.1A
	Maximum Drain Source Voltage Vds 1kV
	Package Type TO-247AC
	Series IRFPG50
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 2Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 190nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20V
	Maximum Power Dissipation Pd 190W
	Forward Voltage Vf 1.8V
	Maximum Operating Temperature 150°C
	Height 20.7mm
	Length 15.87mm
	Standards/Approvals RoHS
	Width 5.31mm
	Automotive Standard No

Vishay IRFPG50 Series Power MOSFET, 1000V Drain Source Voltage, 190W Power Dissipation - IRFPG50PBF

This power MOSFET is a high-voltage N-channel enhancement device designed for switching and power control in demanding industrial environments. It delivers high drain-to-source voltage capability and is intended for through-hole mounting in power assemblies where robust thermal and electrical performance across a wide ambient range is required.

Features and Benefits:

• 1000V rating enables high-voltage switching applications
• 6.1A continuous drain current supports moderate load currents
• 190W maximum dissipation allows sustained power handling
• 2Ω maximum Rds(on) simplifies gate drive and thermal design
• 190nC typical gate charge informs gate-drive energy budgeting
• 20V gate tolerance permits flexible gate drive margins

Applications

• Suitable for high-voltage power supplies and converters
• Ideal for industrial motor drive front-ends
• Used for inverter and UPS switching stages
• Can be used for resistive load switching in test equipment
• Suitable for through-hole prototyping and repair scenarios

What package and mounting method does it use?

It is supplied in a TO-247AC package designed for through-hole mounting to allow reliable board and heatsink attachment.

What thermal range is it rated to operate within?

It is specified to operate from -55°C up to 150°C, permitting use in environments with wide temperature variation.

How many pins are present and how does that affect layout?

The device has three pins, allowing standard single-channel MOSFET PCB layouts and conventional gate, drain and source routing.

What is the device’s forward voltage and how does that impact switching losses?

The forward voltage is 1.8V which contributes to conduction and switching energy calculations when used in circuits with diode conduction or body-diode events.