onsemi Dual NVMFD5C680NL 2 Type N-Channel MOSFET, 26 A, 60 V Enhancement, 8-Pin DFN NVMFD5C680NLWFT1G
- RS Stock No.:
- 172-3383
- Mfr. Part No.:
- NVMFD5C680NLWFT1G
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 25 units)*
PHP1,577.80
(exc. VAT)
PHP1,767.125
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from May 25, 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 25 - 25 | PHP63.112 | PHP1,577.80 |
| 50 - 75 | PHP57.835 | PHP1,445.88 |
| 100 - 225 | PHP53.396 | PHP1,334.90 |
| 250 - 475 | PHP49.558 | PHP1,238.95 |
| 500 + | PHP47.544 | PHP1,188.60 |
*price indicative
- RS Stock No.:
- 172-3383
- Mfr. Part No.:
- NVMFD5C680NLWFT1G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 26A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | DFN | |
| Series | NVMFD5C680NL | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 41mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 5nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 19W | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 175°C | |
| Width | 5.1 mm | |
| Length | 6.1mm | |
| Standards/Approvals | No | |
| Height | 1.05mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 26A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type DFN | ||
Series NVMFD5C680NL | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 41mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 5nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 19W | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 175°C | ||
Width 5.1 mm | ||
Length 6.1mm | ||
Standards/Approvals No | ||
Height 1.05mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.
Small Footprint (5x6 mm)
Compact Design
Low rDS(on)
Minimize Conduction Loss
Low QG and Capacitance
Minimize Driver Losses
NVMFD5C446NLWF − Wettable Flank Option
Enhanced Optical Inspection
PPAP Capable
Applications
Solenoid driver
Low side / high side driver
Automotive engine controllers
Antilock braking systems
Related links
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