ROHM RD3P200SN N-Channel MOSFET, 20 A, 100 V Enhancement, 3-Pin TO-252 RD3P200SNTL
- RS Stock No.:
- 172-0472
- Mfr. Part No.:
- RD3P200SNTL
- Manufacturer:
- ROHM
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
PHP770.21
(exc. VAT)
PHP862.64
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 240 | PHP77.021 | PHP770.21 |
| 250 - 740 | PHP74.711 | PHP747.11 |
| 750 - 1190 | PHP72.471 | PHP724.71 |
| 1200 - 1990 | PHP70.296 | PHP702.96 |
| 2000 + | PHP68.187 | PHP681.87 |
*price indicative
- RS Stock No.:
- 172-0472
- Mfr. Part No.:
- RD3P200SNTL
- Manufacturer:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-252 | |
| Series | RD3P200SN | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 50mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 20W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 55nC | |
| Forward Voltage Vf | 1.5V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6.8mm | |
| Width | 6.4mm | |
| Height | 2.3mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-252 | ||
Series RD3P200SN | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 50mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 20W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 55nC | ||
Forward Voltage Vf 1.5V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6.8mm | ||
Width 6.4mm | ||
Height 2.3mm | ||
Automotive Standard No | ||
RD3P200SN is a Power MOSFET with Low on - resistance., suitable for Switching.
Low on-resistance.
Fast switching speed.
Drive circuits can be simple.
Parallel use is easy.
Pb-free plating
Related links
- ROHM RD3P200SN N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252
- ROHM RD3P200SN N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252 RD3P200SNTL1
- onsemi PowerTrench N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- Infineon HEXFET N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- onsemi PowerTrench N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 FDPF3860T
- Infineon HEXFET N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 IRFI540NPBF
- DiodesZetex DMN6040SK3 N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 DMN6040SK3-13
- onsemi NTD N-Channel MOSFET 30 V Enhancement, 3-Pin TO-252 NTD20N03L27T4G