Toshiba Dual 2 Type N-Channel MOSFET, 300 mA, 60 V Enhancement, 6-Pin SOT-363 SSM6N7002KFU

This image is representative of the product range

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 100 units)*

PHP483.10

(exc. VAT)

PHP541.10

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 1,300 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
Per Pack*
100 - 400PHP4.831PHP483.10
500 - 900PHP4.40PHP440.00
1000 +PHP4.152PHP415.20

*price indicative

Packaging Options:
RS Stock No.:
171-2523
Mfr. Part No.:
SSM6N7002KFU
Manufacturer:
Toshiba
Find similar products by selecting one or more attributes.
Select all

Brand

Toshiba

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

300mA

Maximum Drain Source Voltage Vds

60V

Package Type

SOT-363

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

1.75Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

150°C

Typical Gate Charge Qg @ Vgs

0.39nC

Forward Voltage Vf

-0.79V

Maximum Power Dissipation Pd

500mW

Maximum Operating Temperature

150°C

Transistor Configuration

Dual

Standards/Approvals

No

Length

2mm

Width

1.25 mm

Height

0.9mm

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

COO (Country of Origin):
TH
High-Speed Switching

Low drain-source on-resistance

RDS(ON) = 1.05 Ω (typ.) (@VGS = 10 V)

RDS(ON) = 1.15 Ω (typ.) (@VGS = 5.0 V)

RDS(ON) = 1.2 Ω (typ.) (@VGS = 4.5 V)

Related links