Toshiba Dual 2 Type N-Channel MOSFET, 300 mA, 60 V Enhancement, 6-Pin SOT-363

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Subtotal (1 reel of 3000 units)*

PHP9,300.00

(exc. VAT)

PHP10,410.00

(inc. VAT)

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Units
Per Unit
Per Reel*
3000 - 3000PHP3.10PHP9,300.00
6000 - 6000PHP3.007PHP9,021.00
9000 +PHP2.917PHP8,751.00

*price indicative

RS Stock No.:
171-2410
Mfr. Part No.:
SSM6N7002KFU
Manufacturer:
Toshiba
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Brand

Toshiba

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

300mA

Maximum Drain Source Voltage Vds

60V

Package Type

SOT-363

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

1.75Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

0.39nC

Minimum Operating Temperature

150°C

Maximum Power Dissipation Pd

500mW

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

-0.79V

Maximum Operating Temperature

150°C

Transistor Configuration

Dual

Height

0.9mm

Length

2mm

Width

1.25 mm

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

COO (Country of Origin):
TH
High-Speed Switching

Low drain-source on-resistance

RDS(ON) = 1.05 Ω (typ.) (@VGS = 10 V)

RDS(ON) = 1.15 Ω (typ.) (@VGS = 5.0 V)

RDS(ON) = 1.2 Ω (typ.) (@VGS = 4.5 V)

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