Toshiba Type N-Channel MOSFET, 100 A, 40 V Enhancement, 8-Pin TSON TPN2R304PL

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Subtotal (1 pack of 10 units)*

PHP344.77

(exc. VAT)

PHP386.14

(inc. VAT)

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  • 14,890 unit(s) shipping from January 02, 2026
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Units
Per Unit
Per Pack*
10 - 40PHP34.477PHP344.77
50 - 90PHP33.444PHP334.44
100 - 990PHP32.44PHP324.40
1000 - 2990PHP31.466PHP314.66
3000 +PHP30.522PHP305.22

*price indicative

Packaging Options:
RS Stock No.:
171-2390
Mfr. Part No.:
TPN2R304PL
Manufacturer:
Toshiba
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Brand

Toshiba

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

40V

Package Type

TSON

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

4mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

41nC

Maximum Power Dissipation Pd

104W

Forward Voltage Vf

-1.2V

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

3.1mm

Width

3.1 mm

Height

0.85mm

Automotive Standard

No

RoHS Status: Exempt

High-Efficiency DC-DC Converters

Switching Voltage Regulators

Motor Drivers

High-speed switching

Small gate charge: QSW = 10.8 nC (typ.)

Small output charge: Qoss = 27 nC (typ.)

Low drain-source on-resistance: RDS(ON) = 1.8 mΩ (typ.) (VGS = 10 V)

Low leakage current: IDSS = 10 μA (max) (VDS = 40 V)

Enhancement mode: Vth = 1.4 to 2.4 V (VDS = 10 V, ID = 0.3 mA)

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