Toshiba Type N-Channel MOSFET, 65 A, 60 V Enhancement, 8-Pin TSON TPN14006NH,L1Q(M

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Subtotal (1 pack of 10 units)*

PHP385.32

(exc. VAT)

PHP431.56

(inc. VAT)

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Units
Per Unit
Per Pack*
10 - 40PHP38.532PHP385.32
50 - 90PHP37.376PHP373.76
100 - 990PHP35.88PHP358.80
1000 - 2990PHP34.085PHP340.85
3000 +PHP32.04PHP320.40

*price indicative

Packaging Options:
RS Stock No.:
171-2385
Mfr. Part No.:
TPN14006NH,L1Q(M
Manufacturer:
Toshiba
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Brand

Toshiba

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

65A

Maximum Drain Source Voltage Vds

60V

Package Type

TSON

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

41mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-1.2V

Typical Gate Charge Qg @ Vgs

15nC

Maximum Power Dissipation Pd

30W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

3.1mm

Width

3.1 mm

Height

0.85mm

Automotive Standard

No

RoHS Status: Exempt

Switching Voltage Regulators

Motor Drivers

DC-DC Converters

High-speed switching

Small gate charge: QSW = 5.5 nC (typ.)

Low drain-source on-resistance: RDS(ON) = 11 mΩ (typ.)

Low leakage current: IDSS = 10 μA (max) (VDS = 60 V)

Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.2 mA)

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