Infineon Dual IRF7343PbF 1 Type P, Type N-Channel MOSFET, 4.7 A, 55 V Depletion, 8-Pin SO-8 IRF7343TRPBF
- RS Stock No.:
- 171-1915
- Mfr. Part No.:
- IRF7343TRPBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
PHP505.68
(exc. VAT)
PHP566.36
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- 3,780 unit(s) shipping from March 26, 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 90 | PHP50.568 | PHP505.68 |
| 100 - 490 | PHP49.05 | PHP490.50 |
| 500 - 990 | PHP47.579 | PHP475.79 |
| 1000 - 1990 | PHP46.151 | PHP461.51 |
| 2000 + | PHP44.766 | PHP447.66 |
*price indicative
- RS Stock No.:
- 171-1915
- Mfr. Part No.:
- IRF7343TRPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P, Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4.7A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | SO-8 | |
| Series | IRF7343PbF | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 170mΩ | |
| Channel Mode | Depletion | |
| Forward Voltage Vf | 0.96V | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 2W | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Length | 5mm | |
| Width | 4 mm | |
| Height | 1.5mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P, Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4.7A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type SO-8 | ||
Series IRF7343PbF | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 170mΩ | ||
Channel Mode Depletion | ||
Forward Voltage Vf 0.96V | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 2W | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Length 5mm | ||
Width 4 mm | ||
Height 1.5mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
Non Compliant
The Infineon IRF7343 is the 55V dual N- and P- channel HEXFET power MOSFET in a SO-8 package.
RoHS Compliant
Low RDS(on)
Dynamic dv/dt rating
Fast switching
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