ROHM HT8KB6 1 Type P-Channel MOSFET, 15 A, 40 V Depletion, 8-Pin HSMT-8 HT8KB6TB1
- RS Stock No.:
- 265-123
- Mfr. Part No.:
- HT8KB6TB1
- Manufacturer:
- ROHM
This image is representative of the product range
Bulk discount available
Subtotal (1 tape of 10 units)*
PHP497.48
(exc. VAT)
PHP557.18
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 100 unit(s) ready to ship from another location
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Units | Per Unit | Per Tape* |
|---|---|---|
| 10 - 90 | PHP49.748 | PHP497.48 |
| 100 - 240 | PHP47.304 | PHP473.04 |
| 250 - 490 | PHP43.813 | PHP438.13 |
| 500 - 990 | PHP40.322 | PHP403.22 |
| 1000 + | PHP38.838 | PHP388.38 |
*price indicative
- RS Stock No.:
- 265-123
- Mfr. Part No.:
- HT8KB6TB1
- Manufacturer:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 15A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | HSMT-8 | |
| Series | HT8KB6 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 17.2mΩ | |
| Channel Mode | Depletion | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 14W | |
| Typical Gate Charge Qg @ Vgs | 10.6nC | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 15A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type HSMT-8 | ||
Series HT8KB6 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 17.2mΩ | ||
Channel Mode Depletion | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 14W | ||
Typical Gate Charge Qg @ Vgs 10.6nC | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
The ROHM MOSFET is designed for demanding applications that require exceptional efficiency and reliability. The product's robust design, featuring a low on-resistance and high power capacity, positions it as an ideal choice for motor drives and other power management needs. It stands out with its compact HSMT8 packaging, ensuring ease of integration into various electronic systems.
Halogen free design supports compliance with global environmental standards
Guaranteed 100% Rg and UIS testing for enhanced reliability
Wide operating junction temperature range allows for versatile applications
High pulsed drain current capability supports demanding operational profiles
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