Nexperia BSH111BK Type N-Channel MOSFET, 335 mA, 55 V Enhancement, 3-Pin SOT-23 BSH111BKR
- RS Stock No.:
- 170-5339P
- Mfr. Part No.:
- BSH111BKR
- Manufacturer:
- Nexperia
This image is representative of the product range
Bulk discount available
Subtotal 200 units (supplied on a reel)*
PHP645.00
(exc. VAT)
PHP722.40
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- 3,000 unit(s) shipping from May 20, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit |
|---|---|
| 200 - 400 | PHP3.225 |
| 500 - 900 | PHP3.129 |
| 1000 - 2400 | PHP3.035 |
| 2500 + | PHP2.944 |
*price indicative
- RS Stock No.:
- 170-5339P
- Mfr. Part No.:
- BSH111BKR
- Manufacturer:
- Nexperia
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 335mA | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | SOT-23 | |
| Series | BSH111BK | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8.1Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 0.5nC | |
| Maximum Gate Source Voltage Vgs | 10 V | |
| Maximum Power Dissipation Pd | 1.45W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 3mm | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Width | 1.4 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 335mA | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type SOT-23 | ||
Series BSH111BK | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8.1Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 0.5nC | ||
Maximum Gate Source Voltage Vgs 10 V | ||
Maximum Power Dissipation Pd 1.45W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 3mm | ||
Standards/Approvals No | ||
Height 1mm | ||
Width 1.4 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Logic- and Standard Level MOSFETs in a variety of packages. Sample our robust and easy-to-use MOSFETs in the 40 V to 60 V range. They are perfect for space- and power-critical applications, delivering excellent switching performance and class-leading safe operating area (SOA).
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
Low threshold voltage
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 3 kV HBM
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
Related links
- Nexperia BSH111BK Type N-Channel MOSFET 55 V Enhancement, 3-Pin SOT-23 BSH111BKR
- Nexperia BSH111BK Type N-Channel MOSFET 55 V Enhancement, 3-Pin SOT-23
- Infineon OptiMOS Type N-Channel MOSFET 55 V Enhancement, 3-Pin SOT-23 BSS670S2LH6327XTSA1
- Infineon OptiMOS Type N-Channel MOSFET 55 V Enhancement, 3-Pin SOT-23
- Infineon BSS Type N-Channel MOSFET 55 V Enhancement, 3-Pin SOT-23
- Infineon BSS Type N-Channel MOSFET 55 V Enhancement, 3-Pin SOT-23 BSS670S2LH6433XTMA1
- Vishay TrenchFET Type N-Channel MOSFET 25 V Enhancement, 8-Pin SO-8 SIRA20BDP-T1-GE3
- Vishay TrenchFET Type N-Channel MOSFET 25 V Enhancement, 8-Pin SO-8