Nexperia BUK9Y19 Type N-Channel MOSFET, 184 A, 55 V Enhancement, 5-Pin LFPAK BUK9Y19-55B,115
- RS Stock No.:
- 170-5335
- Mfr. Part No.:
- BUK9Y19-55B,115
- Manufacturer:
- Nexperia
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 25 units)*
PHP1,009.80
(exc. VAT)
PHP1,130.975
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 50 unit(s) ready to ship from another location
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Units | Per Unit | Per Pack* |
|---|---|---|
| 25 - 100 | PHP40.392 | PHP1,009.80 |
| 125 - 225 | PHP39.18 | PHP979.50 |
| 250 - 600 | PHP38.004 | PHP950.10 |
| 625 - 1225 | PHP36.864 | PHP921.60 |
| 1250 + | PHP35.758 | PHP893.95 |
*price indicative
- RS Stock No.:
- 170-5335
- Mfr. Part No.:
- BUK9Y19-55B,115
- Manufacturer:
- Nexperia
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 184A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | LFPAK | |
| Series | BUK9Y19 | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 40mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 18nC | |
| Maximum Power Dissipation Pd | 85W | |
| Maximum Gate Source Voltage Vgs | 15 V | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.05mm | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Width | 4.1 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 184A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type LFPAK | ||
Series BUK9Y19 | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 40mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 18nC | ||
Maximum Power Dissipation Pd 85W | ||
Maximum Gate Source Voltage Vgs 15 V | ||
Maximum Operating Temperature 175°C | ||
Height 1.05mm | ||
Standards/Approvals No | ||
Length 5mm | ||
Width 4.1 mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- PH
From driving a simple lamp to the sophisticated needs of power control in engine, body or chassis applications, Nexperia Power Semiconductors can provide the answer to many automotive system power problems.
Suitable for thermally demanding environments due to 175°C rating Focus MOSFET applications Electric Power Steering Engine management Integrated starter generator Transmission Control Automotive Lighting Braking (ABS) Climate control
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed for use in automotive critical applications.
low conduction losses due to low on-state resistance Suitable for logic level gate drive sources Suitable for thermally demanding environments due to 175 °C rating 12 V and 24 V loads Automotive systems General purpose power switching Motors, lamps and solenoids
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