Nexperia BUK9Y59 Type N-Channel MOSFET, 16.7 A, 60 V Enhancement, 5-Pin LFPAK BUK9Y59-60E,115
- RS Stock No.:
- 170-5446
- Mfr. Part No.:
- BUK9Y59-60E,115
- Manufacturer:
- Nexperia
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 25 units)*
PHP744.975
(exc. VAT)
PHP834.375
(inc. VAT)
FREE delivery for orders over ₱5,000.00
In Stock
- 1,300 unit(s) ready to ship from another location
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Units | Per Unit | Per Pack* |
|---|---|---|
| 25 - 100 | PHP29.799 | PHP744.98 |
| 125 - 225 | PHP28.905 | PHP722.63 |
| 250 - 600 | PHP28.038 | PHP700.95 |
| 625 - 1225 | PHP27.197 | PHP679.93 |
| 1250 + | PHP26.38 | PHP659.50 |
*price indicative
- RS Stock No.:
- 170-5446
- Mfr. Part No.:
- BUK9Y59-60E,115
- Manufacturer:
- Nexperia
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 16.7A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | LFPAK | |
| Series | BUK9Y59 | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 133mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 6.1nC | |
| Maximum Power Dissipation Pd | 37W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 10V | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.1mm | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Height | 1.05mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 16.7A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type LFPAK | ||
Series BUK9Y59 | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 133mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 6.1nC | ||
Maximum Power Dissipation Pd 37W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 10V | ||
Maximum Operating Temperature 175°C | ||
Width 4.1mm | ||
Standards/Approvals No | ||
Length 5mm | ||
Height 1.05mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- PH
From driving a simple lamp to the sophisticated needs of power control in engine, body or chassis applications, Nexperia Power Semiconductors can provide the answer to many automotive system power problems.
Suitable for thermally demanding environments due to 175°C rating Focus MOSFET applications Electric Power Steering Engine management Integrated starter generator Transmission Control Automotive Lighting Braking (ABS) Climate control
Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed for use in high performance automotive applications.
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C
12 V Automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching
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