Nexperia PMV16XN Type N-Channel MOSFET, 8.6 A, 20 V Enhancement, 3-Pin SOT-23
- RS Stock No.:
- 170-4851
- Mfr. Part No.:
- PMV16XNR
- Manufacturer:
- Nexperia
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 reel of 3000 units)*
PHP40,386.00
(exc. VAT)
PHP45,231.00
(inc. VAT)
FREE delivery for orders over ₱5,000.00
Temporarily out of stock
- Shipping from March 08, 2027
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Units | Per Unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | PHP13.462 | PHP40,386.00 |
| 6000 - 12000 | PHP13.046 | PHP39,138.00 |
| 15000 - 27000 | PHP12.785 | PHP38,355.00 |
| 30000 + | PHP12.417 | PHP37,251.00 |
*price indicative
- RS Stock No.:
- 170-4851
- Mfr. Part No.:
- PMV16XNR
- Manufacturer:
- Nexperia
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 8.6A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-23 | |
| Series | PMV16XN | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 33mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 12V | |
| Typical Gate Charge Qg @ Vgs | 13.4nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 6.94W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 3mm | |
| Height | 1mm | |
| Width | 1.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 8.6A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-23 | ||
Series PMV16XN | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 33mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 12V | ||
Typical Gate Charge Qg @ Vgs 13.4nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 6.94W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 3mm | ||
Height 1mm | ||
Width 1.4mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Switching solutions for your portable designs. Choose from a wide range of single and dual N-channel MOSFETs up to 20 V. Great reliability due to our trusted TrenchMOS and package technologies. Easy-to-use, our low voltage MOSFETs are designed specifically to meet the demands of portable applications with low drive voltages.
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Trench MOSFET technology
Low threshold voltage
Very fast switching
Enhanced power dissipation capability of 1200 mW
Target applications
LED driver
Power management
Low-side load switch
Switching circuits
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