Nexperia PMV16XN Type N-Channel MOSFET, 8.6 A, 20 V Enhancement, 3-Pin SOT-23 PMV16XNR
- RS Stock No.:
- 170-5355
- Mfr. Part No.:
- PMV16XNR
- Manufacturer:
- Nexperia
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 50 units)*
PHP617.50
(exc. VAT)
PHP691.50
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- 3,000 unit(s) shipping from May 20, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 50 - 200 | PHP12.35 | PHP617.50 |
| 250 - 450 | PHP11.98 | PHP599.00 |
| 500 - 1200 | PHP11.62 | PHP581.00 |
| 1250 - 2450 | PHP11.272 | PHP563.60 |
| 2500 + | PHP10.934 | PHP546.70 |
*price indicative
- RS Stock No.:
- 170-5355
- Mfr. Part No.:
- PMV16XNR
- Manufacturer:
- Nexperia
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 8.6A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | PMV16XN | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 33mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 13.4nC | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 6.94W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 3mm | |
| Height | 1mm | |
| Width | 1.4 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 8.6A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series PMV16XN | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 33mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 13.4nC | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 6.94W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 3mm | ||
Height 1mm | ||
Width 1.4 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Switching solutions for your portable designs. Choose from a wide range of single and dual N-channel MOSFETs up to 20 V. Great reliability due to our trusted TrenchMOS and package technologies. Easy-to-use, our low voltage MOSFETs are designed specifically to meet the demands of portable applications with low drive voltages.
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Trench MOSFET technology
Low threshold voltage
Very fast switching
Enhanced power dissipation capability of 1200 mW
Target applications
LED driver
Power management
Low-side load switch
Switching circuits
Related links
- Nexperia PMV16XN Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- DiodesZetex Isolated 2 Type N-Channel MOSFET 20 V Enhancement, 8-Pin TSSOP
- DiodesZetex Isolated 2 Type N-Channel MOSFET 20 V Enhancement, 8-Pin TSSOP DMN2016UTS-13
- STMicroelectronics Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-220
- STMicroelectronics Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-220 STP10NK70ZFP
- DiodesZetex DMP4025LK3 Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-252 DMP4025LK3-13
- DiodesZetex DMP4025LK3 Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-252
- onsemi Isolated PowerTrench 2 Type N 8.6 A 8-Pin SOIC FDS8858CZ