P-Channel MOSFET, 8 A, 30 V, 8-Pin SO-8 Infineon SI4435DYTRPBF
- RS Stock No.:
- 170-2264
- Mfr. Part No.:
- SI4435DYTRPBF
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 reel of 4000 units)**
PHP68,600.00
(exc. VAT)
PHP76,840.00
(inc. VAT)
4000 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for over PHP7,000.00 (ex VAT)
Units | Per Unit | Per Reel** |
|---|---|---|
| 4000 - 4000 | PHP17.15 | PHP68,600.00 |
| 8000 - 8000 | PHP15.831 | PHP63,324.00 |
| 12000 + | PHP14.70 | PHP58,800.00 |
**price indicative
- RS Stock No.:
- 170-2264
- Mfr. Part No.:
- SI4435DYTRPBF
- Manufacturer:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | Infineon | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 8 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SO-8 | |
| Series | Si4435DYPbF | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 35 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 2.5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | 20 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 5mm | |
| Typical Gate Charge @ Vgs | 40 nC @ 10 V | |
| Width | 4mm | |
| Number of Elements per Chip | 1 | |
| Height | 1.5mm | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Manufacturer Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 8 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SO-8 | ||
Series Si4435DYPbF | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 35 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 20 V | ||
Maximum Operating Temperature +150 °C | ||
Length 5mm | ||
Typical Gate Charge @ Vgs 40 nC @ 10 V | ||
Width 4mm | ||
Number of Elements per Chip 1 | ||
Height 1.5mm | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
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