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Infineon Si4435DYPbF Type P-Channel MOSFET, 8 A, 30 V Enhancement, 8-Pin SO-8

RS Stock No.:: 170-2264
Mfr. Part No.:: SI4435DYTRPBF
Manufacturer:: Infineon

Infineon Si4435DYPbF Type P-Channel MOSFET, 8 A, 30 V Enhancement, 8-Pin SO-8

This image is representative of the product range

Bulk discount available

Subtotal (1 reel of 4000 units)*

PHP90,932.00

(exc. VAT)

PHP101,844.00

(inc. VAT)

FREE delivery for orders over ₱3,000.00

Last RS stock

Final 4,000 unit(s), ready to ship from another location

Units	Per Unit	Per Reel*
4000 - 4000	PHP22.733	PHP90,932.00
8000 - 8000	PHP20.984	PHP83,936.00
12000 +	PHP19.485	PHP77,940.00

*price indicative

RS Stock No.:: 170-2264
Mfr. Part No.:: SI4435DYTRPBF
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	8A
	Maximum Drain Source Voltage Vds	30V
	Package Type	SO-8
	Series	Si4435DYPbF
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	35mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	40nC
	Maximum Power Dissipation Pd	2.5W
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	-1.2V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Height	1.5mm
	Length	5mm
	Width	4 mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 8A
	Maximum Drain Source Voltage Vds 30V
	Package Type SO-8
	Series Si4435DYPbF
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 35mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 40nC
	Maximum Power Dissipation Pd 2.5W
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Forward Voltage Vf -1.2V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Height 1.5mm
	Length 5mm
	Width 4 mm
	Automotive Standard No

Non Compliant

The Infineon SI4435DY is the 30V single P-channel HEXFET power MOSFET in a SO-8 package. These P-channel HEXFET power MOSFETs from International Rectifier utilize Advanced processing techniques to achieve the extremely low on-resistance per silicon area.

P-channel MOSFET

Surface mount

Available in tape and reel

Lead free

Infineon Si4435DYPbF Type P-Channel MOSFET, 8 A, 30 V Enhancement, 8-Pin SO-8

FREE delivery for orders over ₱3,000.00

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