Vishay TrenchFET Type P-Channel MOSFET, 14.9 A, 30 V Enhancement, 8-Pin SO-8 SI4825DDY-T1-GE3
- RS Stock No.:
- 180-8134
- Mfr. Part No.:
- SI4825DDY-T1-GE3
- Manufacturer:
- Vishay
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PHP583.70
(exc. VAT)
PHP653.70
(inc. VAT)
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Last RS stock
- Final 2,110 unit(s), ready to ship from another location
Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 40 | PHP58.37 | PHP583.70 |
| 50 - 90 | PHP56.617 | PHP566.17 |
| 100 - 490 | PHP54.919 | PHP549.19 |
| 500 - 990 | PHP53.269 | PHP532.69 |
| 1000 + | PHP51.67 | PHP516.70 |
*price indicative
- RS Stock No.:
- 180-8134
- Mfr. Part No.:
- SI4825DDY-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 14.9A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | TrenchFET | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 20.5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 29.5nC | |
| Forward Voltage Vf | -1.2V | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Maximum Power Dissipation Pd | 3.2W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.75mm | |
| Width | 6.2mm | |
| Length | 5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 14.9A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series TrenchFET | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 20.5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 29.5nC | ||
Forward Voltage Vf -1.2V | ||
Maximum Gate Source Voltage Vgs 25V | ||
Maximum Power Dissipation Pd 3.2W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.75mm | ||
Width 6.2mm | ||
Length 5mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 30V and a maximum gate-source voltage of 25V. It has drain-source resistance of 12.5mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 5W and continuous drain current of 14.9A. It has a minimum and a maximum driving voltage of 4.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
Applications
• Load Switch
• Notebook Adaptor Switch
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested
• UIS tested
Related links
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