N-Channel MOSFET, 3.5 A, 650 V, 3-Pin TO-220 STMicroelectronics STP5N60M2
- RS Stock No.:
- 168-8630
- Mfr. Part No.:
- STP5N60M2
- Manufacturer:
- STMicroelectronics
Subtotal (1 tube of 50 units)**
PHP3,325.00
(exc. VAT)
PHP3,724.00
(inc. VAT)
Temporarily out of stock - back order for despatch 11/08/2025, delivery within 10 working days from desptach date*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for over PHP7,000.00 (ex VAT)
Units | Per Unit | Per Tube** |
|---|---|---|
| 50 + | PHP66.50 | PHP3,325.00 |
**price indicative
- RS Stock No.:
- 168-8630
- Mfr. Part No.:
- STP5N60M2
- Manufacturer:
- STMicroelectronics
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 3.5 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | TO-220 | |
| Series | MDmesh M2 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 1.4 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 45 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -25 V, +25 V | |
| Typical Gate Charge @ Vgs | 8.5 nC @ 10 V | |
| Transistor Material | Si | |
| Width | 4.6mm | |
| Number of Elements per Chip | 1 | |
| Length | 10.4mm | |
| Maximum Operating Temperature | +150 °C | |
| Height | 15.75mm | |
Select all | ||
|---|---|---|
Manufacturer STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 3.5 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type TO-220 | ||
Series MDmesh M2 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 1.4 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 45 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Typical Gate Charge @ Vgs 8.5 nC @ 10 V | ||
Transistor Material Si | ||
Width 4.6mm | ||
Number of Elements per Chip 1 | ||
Length 10.4mm | ||
Maximum Operating Temperature +150 °C | ||
Height 15.75mm | ||
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