STMicroelectronics MDmesh M2 Type N-Channel MOSFET, 7.5 A, 650 V Enhancement, 3-Pin TO-220 STP10N60M2
- RS Stock No.:
- 786-3763
- Mfr. Part No.:
- STP10N60M2
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
PHP291.84
(exc. VAT)
PHP326.86
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from April 24, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 45 | PHP58.368 | PHP291.84 |
| 50 - 245 | PHP57.202 | PHP286.01 |
| 250 - 495 | PHP56.058 | PHP280.29 |
| 500 - 995 | PHP54.936 | PHP274.68 |
| 1000 + | PHP53.838 | PHP269.19 |
*price indicative
- RS Stock No.:
- 786-3763
- Mfr. Part No.:
- STP10N60M2
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 7.5A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | MDmesh M2 | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 600mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 85W | |
| Typical Gate Charge Qg @ Vgs | 13.5nC | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Height | 15.75mm | |
| Width | 4.6 mm | |
| Length | 10.4mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 7.5A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series MDmesh M2 | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 600mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 85W | ||
Typical Gate Charge Qg @ Vgs 13.5nC | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Height 15.75mm | ||
Width 4.6 mm | ||
Length 10.4mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-channel MDmesh™ M2 Series, STMicroelectronics
A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).
MOSFET Transistors, STMicroelectronics
Related links
- STMicroelectronics MDmesh M2 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- STMicroelectronics MDmesh M2 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 STF10N60M2
- STMicroelectronics MDmesh M2 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- STMicroelectronics MDmesh M2 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- STMicroelectronics MDmesh M2 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- STMicroelectronics MDmesh M2 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- STMicroelectronics MDmesh M2 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 STP18N60M2
- STMicroelectronics MDmesh M2 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 STF24N60M2