STMicroelectronics MDmesh, SuperMESH Type N-Channel MOSFET, 53 A, 500 V Enhancement, 4-Pin ISOTOP STE53NC50
- RS Stock No.:
- 168-6097
- Mfr. Part No.:
- STE53NC50
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
Subtotal (1 tube of 10 units)*
PHP22,952.35
(exc. VAT)
PHP25,706.63
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 20 unit(s) ready to ship from another location
- Plus 10 unit(s) shipping from March 11, 2026
- Plus 20 unit(s) shipping from April 29, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Tube* |
|---|---|---|
| 10 + | PHP2,295.235 | PHP22,952.35 |
*price indicative
- RS Stock No.:
- 168-6097
- Mfr. Part No.:
- STE53NC50
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 53A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Series | MDmesh, SuperMESH | |
| Package Type | ISOTOP | |
| Mount Type | Panel | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 80mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 310nC | |
| Minimum Operating Temperature | -65°C | |
| Forward Voltage Vf | 1.6V | |
| Maximum Power Dissipation Pd | 460W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 38.2mm | |
| Width | 25.5 mm | |
| Height | 9.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 53A | ||
Maximum Drain Source Voltage Vds 500V | ||
Series MDmesh, SuperMESH | ||
Package Type ISOTOP | ||
Mount Type Panel | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 80mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 310nC | ||
Minimum Operating Temperature -65°C | ||
Forward Voltage Vf 1.6V | ||
Maximum Power Dissipation Pd 460W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 38.2mm | ||
Width 25.5 mm | ||
Height 9.1mm | ||
Automotive Standard No | ||
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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