N-Channel MOSFET, 90 A, 600 V, 4-Pin SOT-227 IXYS IXFN110N60P3

RS Stock No.:: 168-4756
Mfr. Part No.:: IXFN110N60P3
Manufacturer:: IXYS

N-Channel MOSFET, 90 A, 600 V, 4-Pin SOT-227 IXYS IXFN110N60P3

This image is representative of the product range

Price Each (In a Tube of 10)**

PHP2,292.179

(exc. VAT)

PHP2,567.24

(inc. VAT)

Temporarily out of stock - back order for despatch 11/10/2025, delivery within 10 working days from desptach date*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for over PHP7,000.00 (ex VAT)

Units	Per Unit	Per Tube**
10 +	PHP2,292.179	PHP22,921.79

**price indicative

RS Stock No.:: 168-4756
Mfr. Part No.:: IXFN110N60P3
Manufacturer:: IXYS

IXFN110N60P3, Polar3 HiPerFET Power MOSFET, N-Channel Enhancement Mode, Avalanche Rated, Fast Intrinsic Rectifier
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	90 A
Maximum Drain Source Voltage	600 V
Package Type	SOT-227
Series	HiperFET, Polar3
Mounting Type	Screw Mount
Pin Count	4
Maximum Drain Source Resistance	56 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	1.5 kW
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Number of Elements per Chip	1
Width	25.07mm
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Length	38.23mm
Typical Gate Charge @ Vgs	245 nC @ 10 V
Minimum Operating Temperature	-55 °C
Height	9.6mm

N-Channel MOSFET, 90 A, 600 V, 4-Pin SOT-227 IXYS IXFN110N60P3

FREE delivery for over PHP7,000.00 (ex VAT)

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series

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