IXYS Type N-Channel MOSFET, 192 A, 300 V Enhancement, 4-Pin SOT-227 IXFN210N30P3

This image is representative of the product range

Subtotal (1 tube of 10 units)*

PHP27,045.61

(exc. VAT)

PHP30,291.08

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 240 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
Per Tube*
10 +PHP2,704.561PHP27,045.61

*price indicative

RS Stock No.:
177-5342
Mfr. Part No.:
IXFN210N30P3
Manufacturer:
IXYS
Find similar products by selecting one or more attributes.
Select all

Brand

IXYS

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

192A

Maximum Drain Source Voltage Vds

300V

Package Type

SOT-227

Mount Type

Panel

Pin Count

4

Maximum Drain Source Resistance Rds

14.5mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

268nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.5V

Maximum Power Dissipation Pd

1.5kW

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

9.6mm

Length

38.23mm

Width

25.07 mm

Automotive Standard

No

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series


A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

MOSFET Transistors, IXYS


A wide range of advanced discrete Power MOSFET devices from IXYS

Related links