Infineon HEXFET Type N-Channel MOSFET, 2.7 A, 30 V Enhancement, 3-Pin SOT-23

RS Stock No.:: 165-7763
Mfr. Part No.:: IRLML2030TRPBF
Manufacturer:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 2.7 A, 30 V Enhancement, 3-Pin SOT-23

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RS Stock No.:: 165-7763
Mfr. Part No.:: IRLML2030TRPBF
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	2.7A
	Maximum Drain Source Voltage Vds	30V
	Series	HEXFET
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	100mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	1.3W
	Forward Voltage Vf	1V
	Typical Gate Charge Qg @ Vgs	1nC
	Maximum Operating Temperature	150°C
	Length	3.04mm
	Standards/Approvals	No
	Height	1.02mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 2.7A
	Maximum Drain Source Voltage Vds 30V
	Series HEXFET
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 100mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 1.3W
	Forward Voltage Vf 1V
	Typical Gate Charge Qg @ Vgs 1nC
	Maximum Operating Temperature 150°C
	Length 3.04mm
	Standards/Approvals No
	Height 1.02mm
	Automotive Standard No

COO (Country of Origin):: PH

Infineon HEXFET Series MOSFET, 30V Maximum Drain Source Voltage, 100mΩ Maximum Drain Source Resistance - IRLML2030TRPBF

This MOSFET is a compact N-channel enhancement device designed for low-power switching in small-form-factor surface-mount assemblies. It is intended for applications requiring moderate current handling and a 30V blocking capability, performing switching duties across a wide ambient range from cold to high-temperature environments.

Features and Benefits:

• Low on-resistance 100mΩ reduces conduction losses and heat
• 30V drain-source rating permits moderate-voltage switching
• Continuous drain current 2.7A supports sustained load operation
• Low gate charge 1nC enables fast, efficient switching
• Maximum power dissipation 1.3W allows thermal budgeting
• Gate-source withstand 20V provides input margin for drivers

Applications

• Suitable for battery protection and load switching circuits
• Ideal for portable device power-management stages
• Used with DC-DC converters in small SMD designs
• Can be used for LED drivers and small motor control
• Suitable for signal-level switching in consumer electronics

What thermal range can it operate within?

It functions from -55°C up to 150°C, enabling use across extreme ambient conditions.

How is it packaged for PCB assembly?

It is supplied in a SOT-23 surface-mount package for compact board placement.

What electrical role does the device serve in switching designs?

It acts as a low-voltage switch transistor, handling on/off control while limiting conduction losses due to its specified RDS(on).

How small is the component footprint for layout planning?

The device measures 3.04 x 1.4 x 1.02mm, allowing tight component packing on SMD boards.