Infineon HEXFET Type N-Channel MOSFET, 2.7 A, 30 V Enhancement, 3-Pin SOT-23

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Subtotal (1 reel of 3000 units)*

PHP13,662.00

(exc. VAT)

PHP15,300.00

(inc. VAT)

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Units
Per Unit
Per Reel*
3000 +PHP4.554PHP13,662.00

*price indicative

RS Stock No.:
165-7763
Mfr. Part No.:
IRLML2030TRPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

2.7A

Maximum Drain Source Voltage Vds

30V

Package Type

SOT-23

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

100mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

1nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

1.3W

Forward Voltage Vf

1V

Maximum Operating Temperature

150°C

Length

3.04mm

Width

1.4 mm

Height

1.02mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
PH

N-Channel Power MOSFET 30V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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