Infineon HEXFET Type N-Channel MOSFET, 2.7 A, 30 V Enhancement, 3-Pin SOT-23 IRLML2030TRPBF
- RS Stock No.:
- 725-9353
- Mfr. Part No.:
- IRLML2030TRPBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 20 units)*
PHP192.06
(exc. VAT)
PHP215.10
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 520 unit(s) ready to ship from another location
- Plus 2,000 unit(s) shipping from January 01, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 20 - 20 | PHP9.603 | PHP192.06 |
| 40 - 80 | PHP8.689 | PHP173.78 |
| 100 - 180 | PHP8.243 | PHP164.86 |
| 200 - 380 | PHP8.153 | PHP163.06 |
| 400 + | PHP8.07 | PHP161.40 |
*price indicative
- RS Stock No.:
- 725-9353
- Mfr. Part No.:
- IRLML2030TRPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 2.7A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 100mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.3W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 1nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.04mm | |
| Standards/Approvals | No | |
| Width | 1.4 mm | |
| Height | 1.02mm | |
| Distrelec Product Id | 304-45-312 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 2.7A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 100mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.3W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 1nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Length 3.04mm | ||
Standards/Approvals No | ||
Width 1.4 mm | ||
Height 1.02mm | ||
Distrelec Product Id 304-45-312 | ||
Automotive Standard No | ||
N-Channel Power MOSFET 30V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 IRLML0060TRPBF
- onsemi PowerTrench Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23 FDN359BN
- onsemi PowerTrench Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23 FDN359AN
- onsemi PowerTrench Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- DiodesZetex DMN3061SWQ Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-323 DMN3061SWQ-7
- DiodesZetex DMN3061SW Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-323 DMN3061SW-7