Infineon OptiMOS Type N-Channel MOSFET, 190 mA, 100 V Enhancement, 3-Pin SOT-23 BSS123NH6327XTSA1

RS Stock No.:: 165-5862
Mfr. Part No.:: BSS123NH6327XTSA1
Manufacturer:: Infineon

Infineon OptiMOS Type N-Channel MOSFET, 190 mA, 100 V Enhancement, 3-Pin SOT-23 BSS123NH6327XTSA1

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Subtotal (1 reel of 3000 units)*

PHP14,781.00

(exc. VAT)

PHP16,554.00

(inc. VAT)

FREE delivery for orders over ₱3,000.00

Temporarily out of stock

6,000 unit(s) shipping from August 10, 2026

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Units	Per Unit	Per Reel*
3000 +	PHP4.927	PHP14,781.00

*price indicative

RS Stock No.:: 165-5862
Mfr. Part No.:: BSS123NH6327XTSA1
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	190mA
	Maximum Drain Source Voltage Vds	100V
	Package Type	SOT-23
	Series	OptiMOS
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	10Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	0.6nC
	Forward Voltage Vf	0.8V
	Maximum Power Dissipation Pd	500mW
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Height	1mm
	Standards/Approvals	No
	Length	2.9mm
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 190mA
	Maximum Drain Source Voltage Vds 100V
	Package Type SOT-23
	Series OptiMOS
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 10Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 0.6nC
	Forward Voltage Vf 0.8V
	Maximum Power Dissipation Pd 500mW
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Height 1mm
	Standards/Approvals No
	Length 2.9mm
	Automotive Standard AEC-Q101

RoHS Status: Not Applicable

COO (Country of Origin):: CN

Infineon OptiMOS Series MOSFET, 100V Maximum Drain Source Voltage, 10Ω Maximum Drain Source Resistance - BSS123NH6327XTSA1

This MOSFET is a surface-mount N-channel enhancement transistor designed for switching and control tasks in compact electronic assemblies. It is intended for use across a wide thermal range and in applications where low switching charge and conservative current handling are required. The device is supplied in a SOT-23 package for straightforward PCB mounting and is suitable for environments that demand automotive-grade component robustness.

Features and Benefits:

• 100V drain-source rating enables high-voltage switching capability
• 10Ω Rds(on) simplifies low-power protection and current limiting
• 0.6nC typical gate charge minimises switching losses
• 190mA continuous drain current supports light-load control
• 20V gate voltage rating allows compatibility with common drive levels
• 500mW power dissipation handles modest thermal loads

Applications

• Suitable for battery management sensing circuits
• Ideal for low-current load switching in control modules
• Used with level-shift interfaces in mixed-voltage systems
• Can be used for signal isolation in automotive peripherals
• Appropriate for thermal-limited power distribution networks

What temperature conditions can it withstand in operation?

It operates across a broad range from -55°C up to 150°C, permitting use in both cold-start and high-heat environments.

What mounting and pin configuration does it use?

It is supplied as a three-pin SOT-23 surface-mount package, optimised for automated PCB assembly and small form-factor layouts.

How does its construction influence selection for automotive projects?

The device meets an automotive stress test standard, making it suitable where components must tolerate automotive qualification requirements.

How should thermal dissipation be managed on a PCB?

With a 500mW dissipation limit, designers should provide adequate copper area or thermal vias to spread heat and maintain junction temperatures within safe limits.