Nexperia Type P-Channel MOSFET, -2.9 A, -20 V Enhancement, 4-Pin DFN PMXB75UPEZ
- RS Stock No.:
- 153-1936
- Mfr. Part No.:
- PMXB75UPEZ
- Manufacturer:
- Nexperia
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 50 units)*
PHP716.40
(exc. VAT)
PHP802.35
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- 5,000 unit(s) shipping from May 12, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 50 - 200 | PHP14.328 | PHP716.40 |
| 250 - 1200 | PHP11.824 | PHP591.20 |
| 1250 - 2450 | PHP10.162 | PHP508.10 |
| 2500 - 3700 | PHP9.517 | PHP475.85 |
| 3750 + | PHP8.953 | PHP447.65 |
*price indicative
- RS Stock No.:
- 153-1936
- Mfr. Part No.:
- PMXB75UPEZ
- Manufacturer:
- Nexperia
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -2.9A | |
| Maximum Drain Source Voltage Vds | -20V | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 950mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 8.33W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Typical Gate Charge Qg @ Vgs | 6.8nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 0.36mm | |
| Length | 1.15mm | |
| Width | 1.05 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -2.9A | ||
Maximum Drain Source Voltage Vds -20V | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 950mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 8.33W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Typical Gate Charge Qg @ Vgs 6.8nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 0.36mm | ||
Length 1.15mm | ||
Width 1.05 mm | ||
Automotive Standard No | ||
20 V, P-channel Trench MOSFET, P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Trench MOSFET technology
Leadless ultra small and ultra thin SMD plastic package: 1.1 x 1.0 x 0.37 mm
Exposed drain pad for excellent thermal conduction
ElectroStatic Discharge (ESD) protection 1.5 kV HBM
Drain-source on-state resistance RDSon = 69 mΩ
Very low gate-source threshold voltage for portable applications VGS(th) = -0.68 V
High-side load switch and charging switch for portable devices
Power management in battery driven portables
LED driver
DC-to-DC converter
Related links
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