Nexperia Type P-Channel MOSFET, -2.4 A, -30 V Enhancement, 4-Pin DFN PMXB120EPEZ
- RS Stock No.:
- 151-3227
- Mfr. Part No.:
- PMXB120EPEZ
- Manufacturer:
- Nexperia
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 25 units)*
PHP436.10
(exc. VAT)
PHP488.425
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- 9,600 unit(s) shipping from May 27, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 25 - 100 | PHP17.444 | PHP436.10 |
| 125 - 1225 | PHP14.415 | PHP360.38 |
| 1250 - 2475 | PHP12.39 | PHP309.75 |
| 2500 - 3725 | PHP11.615 | PHP290.38 |
| 3750 + | PHP10.931 | PHP273.28 |
*price indicative
- RS Stock No.:
- 151-3227
- Mfr. Part No.:
- PMXB120EPEZ
- Manufacturer:
- Nexperia
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | -2.4A | |
| Maximum Drain Source Voltage Vds | -30V | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 187mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 6.2nC | |
| Maximum Power Dissipation Pd | 8.33W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 0.36mm | |
| Width | 1.05 mm | |
| Length | 1.15mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id -2.4A | ||
Maximum Drain Source Voltage Vds -30V | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 187mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 6.2nC | ||
Maximum Power Dissipation Pd 8.33W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 0.36mm | ||
Width 1.05 mm | ||
Length 1.15mm | ||
Automotive Standard No | ||
P-channel MOSFETs, The perfect fit for your design when N-channels simply aren’t suitable, Our extensive MOSFET catalog also includes many P-channel device families, based on Nexperia’s leading Trench technology. Rated from 12 V to 70 V and housed in low- and medium-power packages, they offer our familiar blend of high efficiency and high reliability.
30 V, P-channel Trench MOSFET, P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Trench MOSFET technology
Leadless ultra small and ultra thin SMD plastic package: 1.1 x 1.0 x 0.37 mm
Exposed drain pad for excellent thermal conduction
ElectroStatic Discharge (ESD) protection 1 kV HBM
Drain-source on-state resistance RDSon = 350 mΩ
Related links
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- Nexperia Type P-Channel MOSFET -20 V Enhancement, 4-Pin DFN PMXB75UPEZ
- Nexperia Type N-Channel MOSFET 12 V Enhancement, 4-Pin DFN
- Nexperia Type N-Channel MOSFET 30 V Enhancement, 4-Pin DFN
- Nexperia Type N-Channel MOSFET 30 V Enhancement, 4-Pin DFN PMXB56ENZ