Nexperia Type N-Channel MOSFET, 3.2 A, 12 V Enhancement, 4-Pin DFN
- RS Stock No.:
- 153-0715
- Mfr. Part No.:
- PMXB40UNEZ
- Manufacturer:
- Nexperia
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 5000 units)*
PHP34,765.00
(exc. VAT)
PHP38,935.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- 10,000 unit(s) shipping from May 20, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 5000 - 5000 | PHP6.953 | PHP34,765.00 |
| 10000 - 20000 | PHP6.889 | PHP34,445.00 |
| 25000 + | PHP6.801 | PHP34,005.00 |
*price indicative
- RS Stock No.:
- 153-0715
- Mfr. Part No.:
- PMXB40UNEZ
- Manufacturer:
- Nexperia
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 3.2A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 121mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 66nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 8.33W | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.05 mm | |
| Length | 1.15mm | |
| Height | 0.36mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 3.2A | ||
Maximum Drain Source Voltage Vds 12V | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 121mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 66nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 8.33W | ||
Maximum Operating Temperature 150°C | ||
Width 1.05 mm | ||
Length 1.15mm | ||
Height 0.36mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
12 V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Trench MOSFET technology
Leadless ultra small and thin SMD plastic package: 1.1 x 1.0 x 0.37 mm
Exposed drain pad for excellent thermal conduction
ElectroStatic Discharge (ESD) protection 1 kV
Very low Drain-Source on-state resistance RDSon = 34 mΩ
Very low threshold voltage of 0.65 V for portable applications
Low-side load switch and charging switch for portable devices
Power management in battery-driven portables
LED driver
DC-to-DC converters
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